Please use this identifier to cite or link to this item: https://doi.org/10.1021/nn901111s
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dc.titleHigh-throughput synthesis of graphene by intercalation-exfoliation of graphite oxide and study of ionic screening in graphene transistor
dc.contributor.authorAng, P.K.
dc.contributor.authorWang, S.
dc.contributor.authorBao, Q.
dc.contributor.authorThong, J.T.L.
dc.contributor.authorLoh, K.P.
dc.date.accessioned2014-10-07T04:29:48Z
dc.date.available2014-10-07T04:29:48Z
dc.date.issued2009-11-24
dc.identifier.citationAng, P.K., Wang, S., Bao, Q., Thong, J.T.L., Loh, K.P. (2009-11-24). High-throughput synthesis of graphene by intercalation-exfoliation of graphite oxide and study of ionic screening in graphene transistor. ACS Nano 3 (11) : 3587-3594. ScholarBank@NUS Repository. https://doi.org/10.1021/nn901111s
dc.identifier.issn19360851
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82471
dc.description.abstractWe report a high-throughput method of generating graphene monolayer (>90% yield) from weakly oxidized, poorly dispersed graphite oxide (GO) aggregates. These large-sized GO aggregates consist of multilayer graphite flakes which are oxidized on the outer layers, while the inner layers consist of pristine or mildly oxidized graphene sheets. Intercalation-exfoliation of these GO aggregates by tetrabutylammonium cations yields large-sized conductive graphene sheets (mean sheet area of 330 ± 10 μm2) with high monolayer yield. Thin-film field-effect transistors made from these graphene sheets exhibit high mobility upon nullifying Coulomb scattering by ionic screening. Ionic screening versus chemical doping effects of different ions such as chloride and fluoride on these graphene films were investigated with a combination of in situ Raman spectroscopy and transport measurement. © 2009 American Chemical Society.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1021/nn901111s
dc.sourceScopus
dc.subjectExfoliation
dc.subjectGraphene
dc.subjectIntercalation
dc.subjectIonic screening
dc.typeArticle
dc.contributor.departmentCHEMISTRY
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1021/nn901111s
dc.description.sourcetitleACS Nano
dc.description.volume3
dc.description.issue11
dc.description.page3587-3594
dc.identifier.isiut000271951200034
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