Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2035144
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dc.titleHigh-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition
dc.contributor.authorLiu, X.
dc.contributor.authorChin, H.-C.
dc.contributor.authorTan, L.S.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:29:45Z
dc.date.available2014-10-07T04:29:45Z
dc.date.issued2010-01
dc.identifier.citationLiu, X., Chin, H.-C., Tan, L.S., Yeo, Y.-C. (2010-01). High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition. IEEE Electron Device Letters 31 (1) : 8-10. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2035144
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82468
dc.description.abstractWe report the first demonstration of an in situ surface-passivation technology for a GaN substrate using vacuum anneal (VA) and silane (SiH4) treatment in a metal-organic chemical vapor deposition multichamber tool. Excellent electrical properties were obtained for TaN/HfAlO/GaN capacitors. Interface state density Dit was measured from midgap to nearconduction-band edge (EC) using the conductance method at high temperatures, and the lowest Dit of 1 × 1011 cm-2 * eV-1 at the midgap was achieved. Multiple frequency capacitance-voltage (C-V )measurement (10, 400, and 500 kHz) showed little frequency dispersion. Furthermore, the TaN/HfAlO/GaN stack was studied using high-resolution transmission electron microscopy, and the effectiveness of passivation using VA and SiH4 was evaluated using high-resolution X-ray photoelectron spectroscopy. The method reported here effectively removes the native oxide and passivates the GaN surface during the high-k dielectric-deposition process. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2035144
dc.sourceScopus
dc.subjectFlatband voltage shift
dc.subjectFrequency dispersion
dc.subjectGallium nitride (GaN)
dc.subjectHigh-k
dc.subjectIn situ surface passivation
dc.subjectInterface state density.
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2009.2035144
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume31
dc.description.issue1
dc.description.page8-10
dc.description.codenEDLED
dc.identifier.isiut000273090800004
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