Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2009.2035144
DC Field | Value | |
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dc.title | High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition | |
dc.contributor.author | Liu, X. | |
dc.contributor.author | Chin, H.-C. | |
dc.contributor.author | Tan, L.S. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:29:45Z | |
dc.date.available | 2014-10-07T04:29:45Z | |
dc.date.issued | 2010-01 | |
dc.identifier.citation | Liu, X., Chin, H.-C., Tan, L.S., Yeo, Y.-C. (2010-01). High-permittivity dielectric stack on gallium nitride formed by silane surface passivation and metal-organic chemical vapor deposition. IEEE Electron Device Letters 31 (1) : 8-10. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2035144 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82468 | |
dc.description.abstract | We report the first demonstration of an in situ surface-passivation technology for a GaN substrate using vacuum anneal (VA) and silane (SiH4) treatment in a metal-organic chemical vapor deposition multichamber tool. Excellent electrical properties were obtained for TaN/HfAlO/GaN capacitors. Interface state density Dit was measured from midgap to nearconduction-band edge (EC) using the conductance method at high temperatures, and the lowest Dit of 1 × 1011 cm-2 * eV-1 at the midgap was achieved. Multiple frequency capacitance-voltage (C-V )measurement (10, 400, and 500 kHz) showed little frequency dispersion. Furthermore, the TaN/HfAlO/GaN stack was studied using high-resolution transmission electron microscopy, and the effectiveness of passivation using VA and SiH4 was evaluated using high-resolution X-ray photoelectron spectroscopy. The method reported here effectively removes the native oxide and passivates the GaN surface during the high-k dielectric-deposition process. © 2006 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2035144 | |
dc.source | Scopus | |
dc.subject | Flatband voltage shift | |
dc.subject | Frequency dispersion | |
dc.subject | Gallium nitride (GaN) | |
dc.subject | High-k | |
dc.subject | In situ surface passivation | |
dc.subject | Interface state density. | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2009.2035144 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 31 | |
dc.description.issue | 1 | |
dc.description.page | 8-10 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000273090800004 | |
Appears in Collections: | Staff Publications |
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