Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.848622
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dc.titleHigh-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
dc.contributor.authorHung, B.F.
dc.contributor.authorChiang, K.C.
dc.contributor.authorHuang, C.C.
dc.contributor.authorChin, A.
dc.contributor.authorMcAlister, S.P.
dc.date.accessioned2014-10-07T04:29:45Z
dc.date.available2014-10-07T04:29:45Z
dc.date.issued2005-06
dc.identifier.citationHung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P. (2005-06). High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric. IEEE Electron Device Letters 26 (6) : 384-386. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848622
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82467
dc.description.abstractWe have integrated a high-Κ LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved - such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-Κ dielectric. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.848622
dc.sourceScopus
dc.subjectHigh-Κ
dc.subjectLaAlO3
dc.subjectThin-film transistors (TFTs)
dc.subjectThreshold voltage
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.848622
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue6
dc.description.page384-386
dc.description.codenEDLED
dc.identifier.isiut000229522000014
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