Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.848622
Title: High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric
Authors: Hung, B.F.
Chiang, K.C.
Huang, C.C.
Chin, A. 
McAlister, S.P.
Keywords: High-Κ
LaAlO3
Thin-film transistors (TFTs)
Threshold voltage
Issue Date: Jun-2005
Citation: Hung, B.F., Chiang, K.C., Huang, C.C., Chin, A., McAlister, S.P. (2005-06). High-performance poly-silicon TFTs incorporating LaA1O3 as the gate dielectric. IEEE Electron Device Letters 26 (6) : 384-386. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.848622
Abstract: We have integrated a high-Κ LaAlO3 dielectric into low-temperature poly-Si (LTPS) thin-film transistors (TFTs). Good TFT performance was achieved - such as a high drive current, low threshold voltage and subthreshold slope, as well as an excellent on/off current ratio and high gate-dielectric breakdown field. This was achieved without hydrogen passivation or special crystallization steps. The good performance is related to the high gate capacitance density and small equivalent-oxide thickness provided by the high-Κ dielectric. © 2005 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82467
ISSN: 07413106
DOI: 10.1109/LED.2005.848622
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