Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.862687
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dc.titleHigh work function IrxSi gates on HfAlON p-MOSFETs
dc.contributor.authorWu, C.H.
dc.contributor.authorYu, D.S.
dc.contributor.authorChin, A.
dc.contributor.authorWang, S.J.
dc.contributor.authorLi, M.-F.
dc.contributor.authorZhu, C.
dc.contributor.authorHung, B.F.
dc.contributor.authorMcAlister, S.P.
dc.date.accessioned2014-10-07T04:29:37Z
dc.date.available2014-10-07T04:29:37Z
dc.date.issued2006-02
dc.identifier.citationWu, C.H., Yu, D.S., Chin, A., Wang, S.J., Li, M.-F., Zhu, C., Hung, B.F., McAlister, S.P. (2006-02). High work function IrxSi gates on HfAlON p-MOSFETs. IEEE Electron Device Letters 27 (2) : 90-92. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.862687
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82457
dc.description.abstractWe have fabricated the fully silicided IrxSi-gated p-MOSFETs on HfAlON gate dielectric with 1.7-nm equivalent oxide thickness. After 950 °C rapid thermal annealing, the fully IrxSi/HfAlON device has high effective work function of 4.9 eV, high peak hole mobility of 80 cm2/V·s, and the advantage of being process compatible to the current VLSI fabrication line. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.862687
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.862687
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume27
dc.description.issue2
dc.description.page90-92
dc.description.codenEDLED
dc.identifier.isiut000234850400004
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