Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.2087167
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dc.titleHigh germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates
dc.contributor.authorGao, F.
dc.contributor.authorBalakumar, S.
dc.contributor.authorBalasubramanian, N.
dc.contributor.authorLee, S.J.
dc.contributor.authorTung, C.H.
dc.contributor.authorKumar, R.
dc.contributor.authorSudhiranjan, T.
dc.contributor.authorFoo, Y.L.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:29:31Z
dc.date.available2014-10-07T04:29:31Z
dc.date.issued2005
dc.identifier.citationGao, F., Balakumar, S., Balasubramanian, N., Lee, S.J., Tung, C.H., Kumar, R., Sudhiranjan, T., Foo, Y.L., Kwong, D.-L. (2005). High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substrates. Electrochemical and Solid-State Letters 8 (12) : G337-G340. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2087167
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82449
dc.description.abstractWe report the fabrication of single-crystalline Si0.4Ge 0.6-on-insulator by oxidizing cosputtered amorphous SiGe film on silicon-on-insulator (SOI) substrates. After a two-step oxidation process, thin SiGe0.6-on-insulator (SGOI) film with a uniform Ge concentration has been achieved. Various defects were observed during condensation. Crystalline properties of the SGOI layers are investigated by micro-Raman technique. The anisotropy of the strain in the Si0.4Ge0.6 film is deconvolved by high-resolution X-ray diffraction measurements and the estimated Ge content closely matches with energy dispersive X-ray analysis in cross-sectional transmission electron microscopy. The overall strain in these SGOI films is beneficial for the improvement of hole mobility of the metal-oxide-semiconductor field effect transistors. A cyclic annealing step is found to be effective for improving the film quality of Si0.4Ge 0.6-on-insulator. Such a cost-effective and simple method is promising for fabricating high Ge-content strained SiGe-on-insulator and pure Ge-on-insulator structures for high mobility device applications. © 2005 The Electrochemical Society. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.2087167
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.2087167
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume8
dc.description.issue12
dc.description.pageG337-G340
dc.description.codenESLEF
dc.identifier.isiut000232697800021
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