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https://doi.org/10.1063/1.2168227
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dc.title | High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3 | |
dc.contributor.author | Ding, S.-J. | |
dc.contributor.author | Zhang, M. | |
dc.contributor.author | Chen, W. | |
dc.contributor.author | Zhang, D.W. | |
dc.contributor.author | Wang, L.-K. | |
dc.contributor.author | Wang, X.P. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Li, M.-F. | |
dc.date.accessioned | 2014-10-07T04:29:30Z | |
dc.date.available | 2014-10-07T04:29:30Z | |
dc.date.issued | 2006 | |
dc.identifier.citation | Ding, S.-J., Zhang, M., Chen, W., Zhang, D.W., Wang, L.-K., Wang, X.P., Zhu, C., Li, M.-F. (2006). High density and program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2/HfO2 - Al2 O 3 nanolaminate/Al2 O3. Applied Physics Letters 88 (4) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168227 | |
dc.identifier.issn | 00036951 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82447 | |
dc.description.abstract | We demonstrate a program-erasable metal-insulator-silicon capacitor with a dielectric structure of SiO2 HfO2 - Al2 O3 nanolaminate (HAN) Al2 O3. The memory capacitor exhibits a high capacitance density of 4.5 fFμ m2, a large memory window of 1.45 V in the case of +12 V program-12 V erase for 5 ms, nearly symmetrical positive and negative flatband voltages under the program/erase operations with the same magnitudes of voltage and time, and no erase saturation. This is attributed to the fact that the introduction of atomic-layer-deposited high-dielectric-constant HAN Al2 O3 layers increases the electric field across the tunnel oxide and reduces that across the blocking layer, hence, preventing effectively Fowler-Nordheim tunneling current through the blocking layer. Additionally, we find that the HAN is a promising charge storage layer with sufficient trapping centers for electrons and holes. © 2006 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2168227 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.2168227 | |
dc.description.sourcetitle | Applied Physics Letters | |
dc.description.volume | 88 | |
dc.description.issue | 4 | |
dc.description.page | 1-3 | |
dc.description.coden | APPLA | |
dc.identifier.isiut | 000234968600071 | |
Appears in Collections: | Staff Publications |
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