Please use this identifier to cite or link to this item:
https://doi.org/10.1088/0957-4484/20/42/425604
Title: | Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms | Authors: | Huang, J.Q. Chiam, S.Y. Chim, W.K. Wong, L.M. Wang, S.J. |
Issue Date: | 2009 | Citation: | Huang, J.Q., Chiam, S.Y., Chim, W.K., Wong, L.M., Wang, S.J. (2009). Heterostructures of germanium nanowires and germanium-silicon oxide nanotubes and growth mechanisms. Nanotechnology 20 (42) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/20/42/425604 | Abstract: | We report on a method to fabricate one-dimensional heterostructures of germanium nanowires (GeNWs) and germanium-silicon oxide nanotubes (GeSiO xNTs). The synthesis of the wire-tube heterostructures is carried out using a simple furnace set-up with germanium tetraiodide and germanium powders as growth precursors, gold-dotted silicon wafers as substrates and by controlling the temperature ramp rate/sequence of the growth precursors. Two types of wire-tube heterostructures resulting from distinct growth mechanisms are obtained. The type-1 heterostructure consists of a GeNW, grown via a gold-catalyzed vapour-liquid-solid process, at the lower end and a GeSiO xNT at the upper end. In contrast, the type-2 heterostructure is made up of a solid wire at the upper end and a hollow tube at the lower end. The solid wire portion of the type-2 heterostructure is formed through an oxide-assisted growth process. © 2009 IOP Publishing Ltd. | Source Title: | Nanotechnology | URI: | http://scholarbank.nus.edu.sg/handle/10635/82445 | ISSN: | 09574484 | DOI: | 10.1088/0957-4484/20/42/425604 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
2
checked on Jan 20, 2021
WEB OF SCIENCETM
Citations
2
checked on Jan 20, 2021
Page view(s)
64
checked on Jan 18, 2021
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.