Please use this identifier to cite or link to this item: https://doi.org/10.1007/s00339-004-2893-6
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dc.titleGrowth of β-Ga 2O 3 nanoparticles by pulsed laser ablation technique
dc.contributor.authorLam, H.M.
dc.contributor.authorHong, M.H.
dc.contributor.authorYuan, S.
dc.contributor.authorChong, T.C.
dc.date.accessioned2014-10-07T04:29:23Z
dc.date.available2014-10-07T04:29:23Z
dc.date.issued2004-12
dc.identifier.citationLam, H.M., Hong, M.H., Yuan, S., Chong, T.C. (2004-12). Growth of β-Ga 2O 3 nanoparticles by pulsed laser ablation technique. Applied Physics A: Materials Science and Processing 79 (8) : 2099-2102. ScholarBank@NUS Repository. https://doi.org/10.1007/s00339-004-2893-6
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82436
dc.description.abstractThis work investigates pulsed laser ablation for Ga 2O 3 nanoparticles. Nanoparticles with diameters of 10 to 500 nm were deposited on silicon substrates in large quantities, by KrF excimer laser ablation of a GaN (99.99% purity) target in high purity nitrogen (99.9995%) background gas at room temperature, without a catalyst. The particle size and phase structure of the as-deposited nanoparticles are examined by X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), transmission electron microscope (TEM), and selected-area electron diffraction (SAD). FE-SEM images show that the nanoparticles aggregate to form micron-size nanoclusters at chamber pressures of 1 and 5 Torr. On the other hand, nanoparticles aggregate with chain-like nanostructures, are synthesized at high chamber pressures (≥ 10 Torr). TEM images further reveal that chain-like nanostructures are formed by the aggregation of individual spherical and ellipsoidal nanoparticles. Photoluminescence measurement shows stable and broad blue emission at 445 nm.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s00339-004-2893-6
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1007/s00339-004-2893-6
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume79
dc.description.issue8
dc.description.page2099-2102
dc.description.codenAPAMF
dc.identifier.isiut000224387200049
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