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Title: Growth of InAs quantum dots on shallow spherically shaped craters prepared on GaAs (0 0 1) substrates: An extended set of vicinal surfaces
Authors: Zheng, Y.B.
Chua, S.J. 
Huan, C.H.A. 
Miao, Z.L.
Keywords: A1. Atomic force microscopy
A1. Reflection high energy electron diffraction
A1. Shallow spherically shaped crater
A3. Molecular beam epitaxy
A3. Quantum dots
B2. III-V-group elements
Issue Date: 1-Mar-2004
Citation: Zheng, Y.B., Chua, S.J., Huan, C.H.A., Miao, Z.L. (2004-03-01). Growth of InAs quantum dots on shallow spherically shaped craters prepared on GaAs (0 0 1) substrates: An extended set of vicinal surfaces. Journal of Crystal Growth 263 (1-4) : 161-166. ScholarBank@NUS Repository.
Abstract: Atomic force microscopy (AFM, Nanoscope IIIA) is used to study InAs quantum-dot structures grown by molecular-beam epitaxy (MBE) on a shallow spherically shaped crater (also called a dimple) with the continuous polar misorientation and azimuthal orientation prepared on GaAs (0 0 1) substrate by a Model 656 Dimple Grinder. It is shown that the step bunches become larger after the growth, suggesting that the Schwoebel barrier, which causes the step bunching, may be decreased by the change of surface reconstruction after the introduction of small amount of In atoms to GaAs surfaces in the initial stage of growth. The number n of the InAs quantum dots per 3 × 3 μm 2 area decreases with increase in polar misorientation angles α but does not depend on the azimuthal orientation angle. These results are plotted for the polar misorientation angles along the [1̄ 1 0], [1 1 0] and [1 0 0] directions. The reduction in quantum dots with an increase in polar misorientation angle is due to the suppression of lattice-mismatched strain. It is observed that the quantum dots tend to form on the humps and valleys. © 2003 Elsevier B.V. All rights rserved.
Source Title: Journal of Crystal Growth
ISSN: 00220248
DOI: 10.1016/j.jcrysgro.2003.11.104
Appears in Collections:Staff Publications

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