Please use this identifier to cite or link to this item: https://doi.org/10.1007/s003390100881
DC FieldValue
dc.titleGrowth and characterization of silicon nitride films on various underlying materials
dc.contributor.authorHan, G.C.
dc.contributor.authorLuo, P.
dc.contributor.authorLi, K.B.
dc.contributor.authorLiu, Z.Y.
dc.contributor.authorWu, Y.H.
dc.date.accessioned2014-10-07T04:29:19Z
dc.date.available2014-10-07T04:29:19Z
dc.date.issued2002-02
dc.identifier.citationHan, G.C., Luo, P., Li, K.B., Liu, Z.Y., Wu, Y.H. (2002-02). Growth and characterization of silicon nitride films on various underlying materials. Applied Physics A: Materials Science and Processing 74 (2) : 243-247. ScholarBank@NUS Repository. https://doi.org/10.1007/s003390100881
dc.identifier.issn09478396
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82431
dc.description.abstractCharacteristics of silicon nitride (SiNx:H) films, grown by plasma enhanced chemical vapor deposition (PECVD) on various metals such as Ta, IrMn, NiFe, Cu, and CoFe at various temperatures down to 100°C, were studied using measurements of BHF etch rate, surface roughness and Auger electron spectroscopy (AES). The results were compared with those obtained for SiNx:H films on Si. The deposition rate of SiNx:H films increased slightly as deposition temperature decreased, and showed a weak dependence on the underlying materials. The surface of the nitride films deposited on all underlying materials at lower temperatures (below 150°C) became rougher. In particular, a bubble-like surface was observed on the nitride film deposited on NiFe at 100°C. At higher deposition temperatures (above 200°C), SiNx:H films on all the above metals had small RMS values, except for films on Cu which cracked at 250°C. BHF (10: 1) etch rate increased dramatically for nitride films deposited below 150°C. For different underlying films, the BHF etch rate was quite different, but exhibited the same trend with decrease in deposition temperature. AES measurements showed that Si and N concentrations in the SiNx:H films were only slightly different for the various deposition temperatures and underlying materials. AES depth profile of nitride films indicated that both surface O content and the depth of oxygen penetrating into SiNx:H increased for low temperature-deposited films. However, there was no observed oxygen signal from within the films, even for films deposited at 100°C, and both Si and N concentrations were uniform throughout the film.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1007/s003390100881
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1007/s003390100881
dc.description.sourcetitleApplied Physics A: Materials Science and Processing
dc.description.volume74
dc.description.issue2
dc.description.page243-247
dc.description.codenAPAMF
dc.identifier.isiut000174223800019
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

11
checked on May 19, 2022

WEB OF SCIENCETM
Citations

8
checked on May 19, 2022

Page view(s)

163
checked on May 12, 2022

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.