Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2060938
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dc.titleGrowth and characterization of dual-beam pulsed-laser-deposited Zn 1-x Co xO thin films
dc.contributor.authorPeng, Y.Z.
dc.contributor.authorLiew, T.
dc.contributor.authorChong, T.C.
dc.contributor.authorSong, W.D.
dc.contributor.authorLi, H.L.
dc.contributor.authorLiu, W.
dc.date.accessioned2014-10-07T04:29:18Z
dc.date.available2014-10-07T04:29:18Z
dc.date.issued2005
dc.identifier.citationPeng, Y.Z., Liew, T., Chong, T.C., Song, W.D., Li, H.L., Liu, W. (2005). Growth and characterization of dual-beam pulsed-laser-deposited Zn 1-x Co xO thin films. Journal of Applied Physics 98 (11) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2060938
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82430
dc.description.abstractDual beam pulsed laser deposition was used to synthesize Zn1-x Cox O thin films with a large range of Co concentrations. In this paper, the influence of growth temperature on the crystal structures, magnetic properties, and semiconductor properties of these films was studied. It was found that the growth temperature has a significant effect on dopant concentration, as well as the structure and properties of the films. The optimum growth temperature is around 650 °C. The thin films were of single crystal especially at low Co concentrations. Epitaxial growth of the thin films was observed. No precipitates were observed at low Co concentrations. Magnetic hysteresis loops were observed at room temperature, indicating that magnetism can be realized with Co doped into ZnO. However, the improvement was limited. The Hall resistivity tended to increase, while carrier density tended to decrease with Co concentration until a certain Co concentration (10%) is achieved. When the growth temperature was greater than 650 °C, the Hall resistivity decreased, while carrier density increased. The Hall mobility increased with growth temperature. The possible reasons of the observed magnetism and semiconductor properties were also discussed. © 2005 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2060938
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2060938
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume98
dc.description.issue11
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000234119600102
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