Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2013.2287031
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dc.titleGermanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration
dc.contributor.authorYang, Y.
dc.contributor.authorHan, G.
dc.contributor.authorGuo, P.
dc.contributor.authorWang, W.
dc.contributor.authorGong, X.
dc.contributor.authorWang, L.
dc.contributor.authorLow, K.L.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:29:10Z
dc.date.available2014-10-07T04:29:10Z
dc.date.issued2013-12
dc.identifier.citationYang, Y., Han, G., Guo, P., Wang, W., Gong, X., Wang, L., Low, K.L., Yeo, Y.-C. (2013-12). Germanium-tin p-channel tunneling field-effect transistor: Device design and technology demonstration. IEEE Transactions on Electron Devices 60 (12) : 4048-4056. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2287031
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82418
dc.description.abstractWe report the demonstration of germanium-tin (GeSn) p-channel tunneling field-effect transistor (p-TFET) with good device performance in terms of on-state current (I-{on}). With the incorporation of Sn, the conduction band minima at \Gamma-point of GeSn alloy shift down, increasing the direct band-to-band tunneling (BTBT) generation rate at the source-channel tunneling junction in TFET. In addition, n-type dopant activation temperature of below 400^{\circ}{\rm C} can be used in GeSn, which is much lower than that in Ge (700^{\circ}{\rm C} ). Therefore, n-type dopant diffusion in GeSn is suppressed leading to an abrupt {\rm n}+ tunneling junction that is favorable for the source junction of a p-TFET. Lateral {\rm Ge}-{0.958}{\rm Sn} 0.042 p-TFETs were fabricated and high Ion of 29 \mu{\rm A}/\mu{\rm m} at V-{\rm GS}=V-{\rm DS}=-2~{\rm V} and 4.34 \mu{\rm A}/\mu{\rm m} at V-{\rm GS}=V-{\rm DS}=-1~{\rm V} is achieved. © 2013 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2013.2287031
dc.sourceScopus
dc.subjectBand-to-band tunneling
dc.subjectdirect bandgap
dc.subjectgermanium-tin
dc.subjectp-channel tunneling field-effect transistor (p-TFET)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2013.2287031
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume60
dc.description.issue12
dc.description.page4048-4056
dc.description.codenIETDA
dc.identifier.isiut000327584400012
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