Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4805051
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dc.titleGermanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study
dc.contributor.authorYang, Y.
dc.contributor.authorLu Low, K.
dc.contributor.authorWang, W.
dc.contributor.authorGuo, P.
dc.contributor.authorWang, L.
dc.contributor.authorHan, G.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:29:09Z
dc.date.available2014-10-07T04:29:09Z
dc.date.issued2013-05-21
dc.identifier.citationYang, Y., Lu Low, K., Wang, W., Guo, P., Wang, L., Han, G., Yeo, Y.-C. (2013-05-21). Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study. Journal of Applied Physics 113 (19) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4805051
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82417
dc.description.abstractWe investigate germanium-tin alloy (Ge1-xSn x) as a material for the design of tunneling field-effect transistor (TFET) operating at low supply voltages. Compared with Ge, Ge1- xSnx has a smaller band-gap. The reported band-gap of Ge0.89Sn0.11 is 0.477 eV, ∼28% smaller than that of Ge. More importantly, Ge1-xSnx becomes a direct band-gap material when Sn composition x is higher than 0.11. By employing Ge1-xSnx in TFET, direct band-to-band tunneling (BTBT) is realized. Direct BTBT generally has higher tunneling probability than indirect BTBT. The drive current of TFET is boosted due to the direct BTBT and the reduced band-gap of Ge1-xSnx. Device simulations show that the drive current and subthreshold swing S characteristics of Ge1-xSnx TFETs with x ranging from 0 to 0.2 are improved by increasing the Sn composition x. For Ge0.8Sn 0.2 TFET, sub-60 mV/decade S is achieved at a high current level of ∼8 μA/μm. For x higher than 0.11, Ge1-xSn x TFETs show higher on-state current ION compared to Ge TFET at a supply voltage of 0.3 V. Ge1-xSnx alloy is a potential candidate for high performance TFET composed of group IV materials. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4805051
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.4805051
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume113
dc.description.issue19
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000319295200059
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