Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2012.2236880
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dc.titleGermanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation
dc.contributor.authorGong, X.
dc.contributor.authorHan, G.
dc.contributor.authorBai, F.
dc.contributor.authorSu, S.
dc.contributor.authorGuo, P.
dc.contributor.authorYang, Y.
dc.contributor.authorCheng, R.
dc.contributor.authorZhang, D.
dc.contributor.authorZhang, G.
dc.contributor.authorXue, C.
dc.contributor.authorCheng, B.
dc.contributor.authorPan, J.
dc.contributor.authorZhang, Z.
dc.contributor.authorTok, E.S.
dc.contributor.authorAntoniadis, D.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:29:08Z
dc.date.available2014-10-07T04:29:08Z
dc.date.issued2013
dc.identifier.citationGong, X., Han, G., Bai, F., Su, S., Guo, P., Yang, Y., Cheng, R., Zhang, D., Zhang, G., Xue, C., Cheng, B., Pan, J., Zhang, Z., Tok, E.S., Antoniadis, D., Yeo, Y.-C. (2013). Germanium-tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with Sub-400 °cSi2H6 passivation. IEEE Electron Device Letters 34 (3) : 339-341. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2236880
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82415
dc.description.abstractIn this letter, we report the first study of the dependence of carrier mobility and drive current IDsat of Ge0.958Sn 0.042 p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) on surface orientations. Compressively strained Ge 0.958Sn0.042 channels were grown on (100) and (111) Ge substrates. Sub-400 °CSi2H6 treatment was introduced for the passivation of the GeSn surface prior to gate stack formation. Source/drain series resistance and subthreshold swing S were found to be independent of surface orientation. The smallest reported S of 130 mV/decade for GeSn pMOSFETs is achieved. The (111)-oriented device demonstrates 13% higher IDsat over the (100)-oriented one at a VGS-VTH of-0.6 V and VDS of-0.9 V. We also found that GeSn pMOSFETs with (111) surface orientation show 18% higher hole mobility than GeSn pMOSFETs with (100) orientation. © 1980-2012 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2012.2236880
dc.sourceScopus
dc.subject(100) and (111) surface orientations
dc.subjectGeSn p-channel metal-oxide- semiconductor field-effect transistors (pMOSFETs)
dc.subjectSi2H6 passivation
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentINST OF MATERIALS RESEARCH & ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1109/LED.2012.2236880
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume34
dc.description.issue3
dc.description.page339-341
dc.description.codenEDLED
dc.identifier.isiut000315723000003
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