Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2088125
DC FieldValue
dc.titleGermanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process
dc.contributor.authorPeng, J.W.
dc.contributor.authorSingh, N.
dc.contributor.authorLo, G.Q.
dc.contributor.authorBosman, M.
dc.contributor.authorNg, C.M.
dc.contributor.authorLee, S.J.
dc.date.accessioned2014-10-07T04:29:06Z
dc.date.available2014-10-07T04:29:06Z
dc.date.issued2011-01
dc.identifier.citationPeng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J. (2011-01). Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible process. IEEE Transactions on Electron Devices 58 (1) : 74-79. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2088125
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82412
dc.description.abstractThis work presents a complementary metaloxidesemiconductor-compatible topdown fabrication of Ge nanowires along with their integration into pMOSFETs with "HfO2/TaN" high-k/metal gate stacks. Lateral Ge wires down to 14 nm in diameter are achieved using a two-step dry etch process on a high-quality epitaxial Ge layer. To improve the interface quality between the Ge nanowire and the HfO2, thermally grown GeO2 and epitaxial-Si shells are used as interlayers. Devices with a GeO2 shell demonstrated excellent ION/I OFF} ratios (>106), whereas the epitaxial-Si shell was found to improve the field-effect mobility of the holes in Ge nanowires to 254 cm2V -1.s-1. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2010.2088125
dc.sourceScopus
dc.subjectCore/shell (C/S)
dc.subjectgermanium (Ge)
dc.subjectmetaloxidesemiconductor field-effect transistor (MOSFET)
dc.subjectnanowire (NW)
dc.subjecttopdown
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2010.2088125
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume58
dc.description.issue1
dc.description.page74-79
dc.description.codenIETDA
dc.identifier.isiut000285840100011
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

11
checked on Apr 8, 2021

WEB OF SCIENCETM
Citations

10
checked on Apr 8, 2021

Page view(s)

52
checked on Mar 29, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.