Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4816695
DC FieldValue
dc.titleGe0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
dc.contributor.authorGuo, P.
dc.contributor.authorHan, G.
dc.contributor.authorGong, X.
dc.contributor.authorLiu, B.
dc.contributor.authorYang, Y.
dc.contributor.authorWang, W.
dc.contributor.authorZhou, Q.
dc.contributor.authorPan, J.
dc.contributor.authorZhang, Z.
dc.contributor.authorSoon Tok, E.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:29:00Z
dc.date.available2014-10-07T04:29:00Z
dc.date.issued2013-07-28
dc.identifier.citationGuo, P., Han, G., Gong, X., Liu, B., Yang, Y., Wang, W., Zhou, Q., Pan, J., Zhang, Z., Soon Tok, E., Yeo, Y.-C. (2013-07-28). Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing. Journal of Applied Physics 114 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4816695
dc.identifier.issn00218979
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82404
dc.description.abstractA low-temperature (∼370°C) Si2H6 treatment was used to form an ultrathin Si layer on a Ge0.97Sn0.03 channel layer on Ge substrate in the fabrication of Ge0.97Sn 0.03 channel pMOSFETs. The impact of the Si passivation layer thickness on the electrical characteristics of Ge0.97Sn 0.03 pMOSFETs was investigated. By increasing the thickness of Si passivation layer from 4 to 7 monolayers (ML), the effective hole mobility μeff at an inversion carrier density Ninv of 1 × 1013 cm-2 was improved by ∼19% ± 4%. This is attributed to reduced carrier scattering by charges found at the interface between the Si layer and the gate dielectric. In addition, the effects of post metal annealing (PMA) were investigated. It was observed that the mid-gap interface trap density Dit was reduced in devices with PMA. Ge 0.97Sn0.03 pMOSFETs with PMA have improved intrinsic transconductance Gm,int, subthreshold swing S, and μeff as compared to the control devices without PMA. © 2013 AIP Publishing LLC.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4816695
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4816695
dc.description.sourcetitleJournal of Applied Physics
dc.description.volume114
dc.description.issue4
dc.description.page-
dc.description.codenJAPIA
dc.identifier.isiut000322539300104
Appears in Collections:Staff Publications

Show simple item record
Files in This Item:
There are no files associated with this item.

SCOPUSTM   
Citations

54
checked on Jul 26, 2021

WEB OF SCIENCETM
Citations

52
checked on Jul 26, 2021

Page view(s)

97
checked on Jul 15, 2021

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.