Please use this identifier to cite or link to this item:
Title: Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
Authors: Guo, H.X.
Kong, E.Y.J.
Zhang, X.
Yeo, Y.-C. 
Issue Date: Feb-2012
Citation: Guo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C. (2012-02). Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository.
Abstract: We investigate a solid state reaction between Ge and Ni-InGaAs on n + In 0.53Ga 0.47As and its effects on the contact resistance of Ni-based contacts on InGaAs. This reaction was performed by isochronous annealing of Ge on Ni-InGaAs at temperatures ranging from 400 to 600°C inN 2 ambient. It was found that a regrown InGaAs layer rich in Ge was formed below the metal contact. Compared with Ni-InGaAs contact, more than 60% reduction in contact resistance on Si-implanted n-In 0.53Ga 0.47As was achieved after annealing at 600°C. This contact structure was characterized by secondary ion mass spectroscopy, high resolution transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. © 2012 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
ISSN: 00214922
DOI: 10.1143/JJAP.51.02BF06
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.


checked on Dec 7, 2019


checked on Nov 29, 2019

Page view(s)

checked on Nov 30, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.