Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.51.02BF06
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dc.titleGe/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As
dc.contributor.authorGuo, H.X.
dc.contributor.authorKong, E.Y.J.
dc.contributor.authorZhang, X.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:28:59Z
dc.date.available2014-10-07T04:28:59Z
dc.date.issued2012-02
dc.identifier.citationGuo, H.X., Kong, E.Y.J., Zhang, X., Yeo, Y.-C. (2012-02). Ge/Ni-InGaAs solid-state reaction for contact resistance reduction on n + In 0.53Ga 0.47As. Japanese Journal of Applied Physics 51 (2 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.51.02BF06
dc.identifier.issn00214922
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82403
dc.description.abstractWe investigate a solid state reaction between Ge and Ni-InGaAs on n + In 0.53Ga 0.47As and its effects on the contact resistance of Ni-based contacts on InGaAs. This reaction was performed by isochronous annealing of Ge on Ni-InGaAs at temperatures ranging from 400 to 600°C inN 2 ambient. It was found that a regrown InGaAs layer rich in Ge was formed below the metal contact. Compared with Ni-InGaAs contact, more than 60% reduction in contact resistance on Si-implanted n-In 0.53Ga 0.47As was achieved after annealing at 600°C. This contact structure was characterized by secondary ion mass spectroscopy, high resolution transmission electron microscopy, X-ray diffraction, and scanning electron microscopy. © 2012 The Japan Society of Applied Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1143/JJAP.51.02BF06
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1143/JJAP.51.02BF06
dc.description.sourcetitleJapanese Journal of Applied Physics
dc.description.volume51
dc.description.issue2 PART 2
dc.description.page-
dc.identifier.isiut000303481400048
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