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|Title:||Gate dielectrics on strained-Si/SiGe heterolayers||Authors:||Maiti, C.K.
|Keywords:||High-k gate dielectric
|Issue Date:||Aug-2004||Citation:||Maiti, C.K., Samanta, S.K., Chatterjee, S., Dalapati, G.K., Bera, L.K. (2004-08). Gate dielectrics on strained-Si/SiGe heterolayers. Solid-State Electronics 48 (8) : 1369-1389. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2004.02.014||Abstract:||The purpose of this article is to report on the recent developments on the gate dielectric formation on strained-Si/SiGe heterolayers. In the first part, growth of a high quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer and SiGe-free strained-Si on Silicon-on-Insulator (SSOI) is briefly reviewed. Characterization results of strained-Si films using atomic force microscopy (AFM), transmission electron microscopy (TEM) and Raman spectroscopy are then presented. In the second part, the processing issues of gate dielectric formation on strained-Si films are critically examined and the thermal oxidation of strained-Si layers are discussed. Low thermal budget processing, such as rapid thermal oxidation (RTO) and low temperature microwave plasma oxidation and nitridation of strained-Si layers are discussed in the third part. Microwave plasma deposition of various high-k gate dielectrics, such as ZrO2, Ta2O5, and TiO2 on strained-Si, their electrical properties and the current conduction mechanisms are also discussed. © 2004 Elsevier Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82399||ISSN:||00381101||DOI:||10.1016/j.sse.2004.02.014|
|Appears in Collections:||Staff Publications|
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