Please use this identifier to cite or link to this item:
|Title:||Gate dielectrics on strained-Si/SiGe heterolayers||Authors:||Maiti, C.K.
|Keywords:||High-k gate dielectric
|Issue Date:||Aug-2004||Citation:||Maiti, C.K., Samanta, S.K., Chatterjee, S., Dalapati, G.K., Bera, L.K. (2004-08). Gate dielectrics on strained-Si/SiGe heterolayers. Solid-State Electronics 48 (8) : 1369-1389. ScholarBank@NUS Repository. https://doi.org/10.1016/j.sse.2004.02.014||Abstract:||The purpose of this article is to report on the recent developments on the gate dielectric formation on strained-Si/SiGe heterolayers. In the first part, growth of a high quality strained-Si layer on a relaxed, linear or step-graded SiGe buffer layer and SiGe-free strained-Si on Silicon-on-Insulator (SSOI) is briefly reviewed. Characterization results of strained-Si films using atomic force microscopy (AFM), transmission electron microscopy (TEM) and Raman spectroscopy are then presented. In the second part, the processing issues of gate dielectric formation on strained-Si films are critically examined and the thermal oxidation of strained-Si layers are discussed. Low thermal budget processing, such as rapid thermal oxidation (RTO) and low temperature microwave plasma oxidation and nitridation of strained-Si layers are discussed in the third part. Microwave plasma deposition of various high-k gate dielectrics, such as ZrO2, Ta2O5, and TiO2 on strained-Si, their electrical properties and the current conduction mechanisms are also discussed. © 2004 Elsevier Ltd. All rights reserved.||Source Title:||Solid-State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82399||ISSN:||00381101||DOI:||10.1016/j.sse.2004.02.014|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 2, 2021
WEB OF SCIENCETM
checked on Feb 22, 2021
checked on Mar 1, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.