Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TMTT.2006.888934
DC Field | Value | |
---|---|---|
dc.title | Frequency-thermal characterization of on-chip transformers with patterned ground shields | |
dc.contributor.author | Shi, J. | |
dc.contributor.author | Yin, W.-Y. | |
dc.contributor.author | Kang, K. | |
dc.contributor.author | Mao, J.-F. | |
dc.contributor.author | Li, L.-W. | |
dc.date.accessioned | 2014-10-07T04:28:44Z | |
dc.date.available | 2014-10-07T04:28:44Z | |
dc.date.issued | 2007-01 | |
dc.identifier.citation | Shi, J., Yin, W.-Y., Kang, K., Mao, J.-F., Li, L.-W. (2007-01). Frequency-thermal characterization of on-chip transformers with patterned ground shields. IEEE Transactions on Microwave Theory and Techniques 55 (1) : 1-11. ScholarBank@NUS Repository. https://doi.org/10.1109/TMTT.2006.888934 | |
dc.identifier.issn | 00189480 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82384 | |
dc.description.abstract | Extensive studies on the performance of on-chip CMOS transformers with and without patterned ground shields (PGSs) at different temperatures are carried out in this paper. These transformers are fabricated using 0.18-μm RF CMOS processes and are designed to have either interleaved or center-tapped interleaved geometries, respectively, but with the same inner dimensions, metal track widths, track spacings, and silicon substrate. Based on the two-port S-parameters measured at different temperatures, all performance parameters of these transformers, such as frequency- and temperature-dependent maximum available gain (Gmax), minimum noise figure (NFmin), quality factor (Q1) of the primary or secondary coil, and power loss (Ploss) are characterized and compared. It is found that: 1) the values of the Gmax and Q1 factor usually decrease with the temperature; however, there may be reverse temperature effects on both G max and Q1 factor beyond certain frequency; 2) with the same geometric parameters, interleaved transformers exhibit better low-frequency performance than center-tapped interleaved transformers, whereas the center-tapped configurations possess lower values of NFmin at higher frequencies; and 3) with temperature rising, the degradation in performance of the interleaved transformers can be effectively compensated by the implementation of a PGS, while for center-tapped geometry, the shielding effectiveness of PGS on the performance improvement is ineffective. © 2006 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TMTT.2006.888934 | |
dc.source | Scopus | |
dc.subject | Interleaved and center-tapped transformers | |
dc.subject | Maximum available gain | |
dc.subject | Minimum noise figure | |
dc.subject | Pattern ground shields (PGSs) | |
dc.subject | Power loss | |
dc.subject | Quality (Q) factor | |
dc.subject | Temperature | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TMTT.2006.888934 | |
dc.description.sourcetitle | IEEE Transactions on Microwave Theory and Techniques | |
dc.description.volume | 55 | |
dc.description.issue | 1 | |
dc.description.page | 1-11 | |
dc.description.coden | IETMA | |
dc.identifier.isiut | 000243620200001 | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.