Please use this identifier to cite or link to this item:
|Title:||Fabrication of single-dot planar nano-devices and the application to the exchange bias characterization in nano-pillar devices||Authors:||Thiyagarajah, N.
|Issue Date:||26-Nov-2012||Citation:||Thiyagarajah, N., Lin, L., Bae, S. (2012-11-26). Fabrication of single-dot planar nano-devices and the application to the exchange bias characterization in nano-pillar devices. Applied Physics Letters 101 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4768944||Abstract:||Single dot [Co/Pd]5/FeMn nano-pillar devices with split nano-contacts are fabricated down to 150 × 150 nm2 dimensions, to understand the effects of nano-patterning on perpendicular exchange bias (PEB) characteristics. Using extraordinary Hall effect measurements, magnetic force microscopy, and numerical calculations, it is shown that the exchange bias field initially increases from the thin-film value, with decreasing dimensions down to a critical dimension below, which it again reduces. The PEB characteristics of the nano-pillar devices are found to be influenced by changes to the ferromagnetic (FM) layer anisotropy, exchange coupling between ferromagnetic and antiferromagnetic layers, in addition to edge effects caused by the fabrication process. © 2012 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82339||ISSN:||00036951||DOI:||10.1063/1.4768944|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 31, 2020
WEB OF SCIENCETM
checked on Mar 23, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.