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|Title:||Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors||Authors:||Heinrich, M.
|Issue Date:||23-Dec-2013||Citation:||Heinrich, M., Kluska, S., Hameiri, Z., Hoex, B., Aberle, A.G. (2013-12-23). Extracting physical properties of arbitrarily shaped laser-doped micro-scale areas in semiconductors. Applied Physics Letters 103 (26) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4856796||Abstract:||We present a method that allows the extraction of relevant physical properties such as sheet resistance and dopant profile from arbitrarily shaped laser-doped micro-scale areas formed in semiconductors with a focused pulsed laser beam. The key feature of the method is to use large laser-doped areas with an identical average number of laser pulses per area (laser pulse density) as the arbitrarily shaped areas. The method is verified using sheet resistance measurements on laser-doped silicon samples. Furthermore, the method is extended to doping with continuous-wave lasers by using the average number of passes per area or density of passes. © 2013 AIP Publishing LLC.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82327||ISSN:||00036951||DOI:||10.1063/1.4856796|
|Appears in Collections:||Staff Publications|
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