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|Title:||Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part I. Series Case||Authors:||Yin, W.-Y.
First resonant frequency
On-chip inductor and capacitor serial interconnect (L-Cs)
|Issue Date:||Nov-2003||Citation:||Yin, W.-Y., Gan, Y.-B., Pan, S., Li, L.-W., Ooi, B.-L. (2003-11). Experimental Characterization of On-Chip Inductor and Capacitor Interconnect: Part I. Series Case. IEEE Transactions on Magnetics 39 (6) : 3497-3502. ScholarBank@NUS Repository. https://doi.org/10.1109/TMAG.2003.819468||Abstract:||Detailed experimental investigations described here show the overall characteristics of on-chip inductor and capacitor serial interconnects (L-Cs) on silicon substrates. Using a new equivalent circuit model and the measured 5 parameters obtained by deembedding techniques, we examine and compare a single inductor, single capacitor, and two sets of series L-Cs. Agreement between the measured and simulated S parameters is excellent. At low frequency, the first resonant frequency fres of series L-Cs can be easily determined fres = (2π√LC)-1, while at high frequency, parasitic parameter effects of both the substrate and the metal strips on f res of the L-Cs circuit must be considered.||Source Title:||IEEE Transactions on Magnetics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82320||ISSN:||00189464||DOI:||10.1109/TMAG.2003.819468|
|Appears in Collections:||Staff Publications|
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