Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.2959727
DC FieldValue
dc.titleExchange bias in nanoscale antidot arrays
dc.contributor.authorTripathy, D.
dc.contributor.authorAdeyeye, A.O.
dc.contributor.authorSingh, N.
dc.date.accessioned2014-10-07T04:27:56Z
dc.date.available2014-10-07T04:27:56Z
dc.date.issued2008-07-14
dc.identifier.citationTripathy, D., Adeyeye, A.O., Singh, N. (2008-07-14). Exchange bias in nanoscale antidot arrays. Applied Physics Letters 93 (2) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2959727
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82316
dc.description.abstractExchange bias effects have been systematically investigated in nanoscale Cu (10 nm) / Ni80 Fe20 (30 nm) / Ir75 Mn 25 (30 nm)/Cu (2 nm) multilayer antidot arrays. The antidot arrays exhibit asymmetric and shifted hysteresis loops along the induced exchange bias direction, with higher coercivity and exchange bias field values as compared to a continuous film deposited under identical conditions. The evolution in exchange bias field with increasing antidot diameter is ascribed to the constraints imposed on the domain size in the Ir75 Mn25 layer and reduced ferromagnetic-ferromagnetic interactions in the Ni 80 Fe20 layer. © 2008 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.2959727
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.2959727
dc.description.sourcetitleApplied Physics Letters
dc.description.volume93
dc.description.issue2
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000257796100064
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