Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2007.893221
DC Field | Value | |
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dc.title | Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner | |
dc.contributor.author | Ang, K.-W. | |
dc.contributor.author | Chui, K.-J. | |
dc.contributor.author | Tung, C.-H. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:27:37Z | |
dc.date.available | 2014-10-07T04:27:37Z | |
dc.date.issued | 2007-04 | |
dc.identifier.citation | Ang, K.-W., Chui, K.-J., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-04). Enhanced strain effects in 25-nm gate-length thin-body nMOSFETs with silicon-carbon source/drain and tensile-stress liner. IEEE Electron Device Letters 28 (4) : 301-304. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.893221 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82289 | |
dc.description.abstract | We report the demonstration of 25-nm gate-length LG strained nMOSFETs featuring the silicon-carbon source and drain (Si1-yC yS/D) regions and a thin-body thickness Tbody of ∼18 nm. This is also the smallest reported planar nMOSFET with the Si1-y Cy S/D stressors. Strain-induced mobility enhancement due to the Si1-yC., leads to a significant drive-current IDsat enhancement of 52% over the control transistor. Furthermore, the integration of tensile-stress SiN etch stop layer and Si1-yCy/D extends the IDsat enhancement to 67%. The performance enhancement was achieved for the devices with similar subthreshold swing and drain-induced barrier lowering. The Si1-yCy S/D technology and its combination with the existing strained-silicon techniques are promising for the future highperformance CMOS applications. © 2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.893221 | |
dc.source | Scopus | |
dc.subject | Electron mobility | |
dc.subject | nMOSFET | |
dc.subject | Silicon nitride liner | |
dc.subject | Silicon-carbon (Si1-y Cy) | |
dc.subject | Strain | |
dc.subject | Stress | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2007.893221 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 28 | |
dc.description.issue | 4 | |
dc.description.page | 301-304 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000245225300015 | |
Appears in Collections: | Staff Publications |
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