Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/19/22/225203
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dc.titleElectrical transport of bottom-up grown single-crystal Si 1-xGex nanowire
dc.contributor.authorYang, W.F.
dc.contributor.authorLee, S.J.
dc.contributor.authorLiang, G.C.
dc.contributor.authorWhang, S.J.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:27:11Z
dc.date.available2014-10-07T04:27:11Z
dc.date.issued2008-06-04
dc.identifier.citationYang, W.F., Lee, S.J., Liang, G.C., Whang, S.J., Kwong, D.L. (2008-06-04). Electrical transport of bottom-up grown single-crystal Si 1-xGex nanowire. Nanotechnology 19 (22) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/19/22/225203
dc.identifier.issn09574484
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82253
dc.description.abstractIn this work, we fabricated an Si1-xGex nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si1-xGex NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-xGex NWs. It is found that both undoped and phosphorus-doped Si1-xGex NW MOSFETs exhibit p-MOS operation while enhanced performance of higher Ion∼100 nA and Ion/Ioff∼105 are achieved from phosphorus-doped Si1-xGex NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec-1 was obtained by reducing HfO2 gate dielectric thickness. A comprehensive study on SBH between the Si1-xGex NW channel and Pd source/drain shows that a doped Si1-xGex NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH. © IOP Publishing Ltd.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1088/0957-4484/19/22/225203
dc.description.sourcetitleNanotechnology
dc.description.volume19
dc.description.issue22
dc.description.page-
dc.description.codenNNOTE
dc.identifier.isiut000255662500003
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