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https://doi.org/10.1063/1.3197144
DC Field | Value | |
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dc.title | Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films | |
dc.contributor.author | Lim, P.S.Y. | |
dc.contributor.author | Lee, R.T.P. | |
dc.contributor.author | Sinha, M. | |
dc.contributor.author | Chi, D.Z. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:26:42Z | |
dc.date.available | 2014-10-07T04:26:42Z | |
dc.date.issued | 2009 | |
dc.identifier.citation | Lim, P.S.Y., Lee, R.T.P., Sinha, M., Chi, D.Z., Yeo, Y.-C. (2009). Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films. Journal of Applied Physics 106 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3197144 | |
dc.identifier.issn | 00218979 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82212 | |
dc.description.abstract | The effective electron Schottky barrier height (φB N) of nickel silicide (NiSi:C) formed on silicon-carbon (Si 1-yCy or Si:C) films with different substitutional carbon concentrations Csub was investigated. φB N was observed to decrease substantially with an increase in Csub. When C sub is increased from 0% to 1.5%, φB N is reduced by 200 meV. The results of this work could be useful for the reduction in contact resistance between nickel silicide and silicon-carbon source and drain in strained n -channel metal-oxide-semiconductor field-effect transistors. © 2009 American Institute of Physics. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.3197144 | |
dc.source | Scopus | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1063/1.3197144 | |
dc.description.sourcetitle | Journal of Applied Physics | |
dc.description.volume | 106 | |
dc.description.issue | 4 | |
dc.description.page | - | |
dc.description.coden | JAPIA | |
dc.identifier.isiut | 000270083800044 | |
Appears in Collections: | Staff Publications |
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