Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.857711
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dc.titleDopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning
dc.contributor.authorPark, C.S.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:26:13Z
dc.date.available2014-10-07T04:26:13Z
dc.date.issued2005-11
dc.identifier.citationPark, C.S., Cho, B.J. (2005-11). Dopant-free FUSI PtxSi metal gate for high work function and reduced Fermi-level pinning. IEEE Electron Device Letters 26 (11) : 796-798. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.857711
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82170
dc.description.abstractHigh work function (4.9 eV) on high-κ gate dielectric, which is suitable for bulk p-MOSFET, has been achieved using fully silicided (FUSI) PtxSi gate without boron predoping of polysilicon. High concentration of Pt in FUSI PtxSi using Ti capping layer on Pt in the FUSI process is a key to achieving high work function and reduced Fermi-level pinning on high-κ dielectric. By combining with substituted Al (SA) gate for nMOSFET, a wide range of work function difference (0.65 eV) between n and pMOSFETs is demonstrated, without any adverse effects of polysilicon predoping. © 2005 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2005.857711
dc.sourceScopus
dc.subjectHigh-κ
dc.subjectMetal gate
dc.subjectWork function
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2005.857711
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume26
dc.description.issue11
dc.description.page796-798
dc.description.codenEDLED
dc.identifier.isiut000232821500006
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