Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2012.2186430
DC Field | Value | |
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dc.title | Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain | |
dc.contributor.author | Han, G. | |
dc.contributor.author | Su, S. | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Guo, P. | |
dc.contributor.author | Yang, Y. | |
dc.contributor.author | Zhan, C. | |
dc.contributor.author | Wang, L. | |
dc.contributor.author | Wang, W. | |
dc.contributor.author | Wang, Q. | |
dc.contributor.author | Xue, C. | |
dc.contributor.author | Cheng, B. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:26:12Z | |
dc.date.available | 2014-10-07T04:26:12Z | |
dc.date.issued | 2012-05 | |
dc.identifier.citation | Han, G., Su, S., Zhou, Q., Guo, P., Yang, Y., Zhan, C., Wang, L., Wang, W., Wang, Q., Xue, C., Cheng, B., Yeo, Y.-C. (2012-05). Dopant segregation and nickel stanogermanide contact formation on p +Ge 0.947Sn 0.053 source/drain. IEEE Electron Device Letters 33 (5) : 634-636. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2012.2186430 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82169 | |
dc.description.abstract | P +Ge 1-xSn x is a promising source and drain (S/D) stressor material for Ge p-MOSFETs, and an S/D material in Ge 1-xSn x channel p-MOSFETs. In this paper, we investigate the dopant segregation (DS) effects in the stanogermanidation of p +Ge 0.947Sn 0.053 (boron-doped). A study comparing the contact resistance R C of nickel stanogermanide [Ni(Ge 1-xSn x) or Ni(GeSn)] contact on p +Ge 1-xSn x and nickel germanide (NiGe) contact on p + Ge was performed. A more pronounced DS effect is achieved during the stanogermanidation in comparison with the NiGe/p + Ge control. R C is 44% lower in the Ni(Ge 1-xSn x)/p + GeSn structure as compared to the NiGe/p + Ge control. The reduced R C is attributed to a more significant DS effect and the lower bandgap of Ge 1-xSn x as compared with Ge. © 2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2012.2186430 | |
dc.source | Scopus | |
dc.subject | Contact resistance R C | |
dc.subject | Dopant segregation (DS) | |
dc.subject | Germanium-tin (Ge 1-xSn x) | |
dc.subject | Ni(Ge 1-xSn x) | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2012.2186430 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 33 | |
dc.description.issue | 5 | |
dc.description.page | 634-636 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000303322500002 | |
Appears in Collections: | Staff Publications |
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