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|Title:||Dislocation dynamics of strain relaxation in epitaxial layers||Authors:||Wang, T.C.
|Issue Date:||Jun-2001||Citation:||Wang, T.C., Zhang, Y.W., Chua, S.J. (2001-06). Dislocation dynamics of strain relaxation in epitaxial layers. Journal of Applied Physics 89 (11 I) : 6069-6072. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1369396||Abstract:||Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations is the incorporation of dislocation interactions into the kinetic process by introducing a resistance term. The resistance to threading dislocation gliding is characterized by a hardening function, which depends only on the relaxed plastic strain. The evolution equations are tested on the GexSi1 - x/Si(100) materials system. Existing fundamental parameters are incorporated into the present model. The evolution equations successfully reproduce a wide range of experimental data on strain relaxation in GexSi1 - x/Si heterostructures. © 2001 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82163||ISSN:||00218979||DOI:||10.1063/1.1369396|
|Appears in Collections:||Staff Publications|
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