Please use this identifier to cite or link to this item:
|Title:||Dislocation dynamics of strain relaxation in epitaxial layers||Authors:||Wang, T.C.
|Issue Date:||Jun-2001||Citation:||Wang, T.C., Zhang, Y.W., Chua, S.J. (2001-06). Dislocation dynamics of strain relaxation in epitaxial layers. Journal of Applied Physics 89 (11 I) : 6069-6072. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1369396||Abstract:||Many experimental observations have clearly shown that dislocation interaction plays a crucial role in the kinetics of strain relaxation in epitaxial thin films. A set of evolution equations are presented in this article. The key feature of the equations is the incorporation of dislocation interactions into the kinetic process by introducing a resistance term. The resistance to threading dislocation gliding is characterized by a hardening function, which depends only on the relaxed plastic strain. The evolution equations are tested on the GexSi1 - x/Si(100) materials system. Existing fundamental parameters are incorporated into the present model. The evolution equations successfully reproduce a wide range of experimental data on strain relaxation in GexSi1 - x/Si heterostructures. © 2001 American Institute of Physics.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82163||ISSN:||00218979||DOI:||10.1063/1.1369396|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 23, 2019
WEB OF SCIENCETM
checked on Aug 15, 2019
checked on Aug 17, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.