Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process

Please use this identifier to cite or link to this item: https://doi.org/10.1088/0960-1317/23/6/065026

Title:	Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process
Authors:	Zhou, H. Kropelnicki, P. Tsai, J.M. Lee, C.
Issue Date:	Jun-2013
Citation:	Zhou, H., Kropelnicki, P., Tsai, J.M., Lee, C. (2013-06). Development of a thermopile infrared sensor using stacked double polycrystalline silicon layers based on the CMOS process. Journal of Micromechanics and Microengineering 23 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/23/6/065026
Abstract:	A stacked double-layer (SDL) thermopile-based infrared sensor, which comprised of 96 thermocouples on a suspended membrane, has been designed and fabricated with a CMOS-compatible process. The thermoelectric properties were characterized, and responsivity (Rs) of 202.8 V W-1 and detectivity (D) of 2.85108 cm Hz1/2 W -1 for a SDL thermopile were derived. © 2013 IOP Publishing Ltd.
Source Title:	Journal of Micromechanics and Microengineering
URI:	http://scholarbank.nus.edu.sg/handle/10635/82144
ISSN:	09601317
DOI:	10.1088/0960-1317/23/6/065026
Appears in Collections:	Staff Publications

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