Please use this identifier to cite or link to this item: https://doi.org/10.1109/TCSI.2009.2037399
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dc.titleDesign of X-band and Ka-band Colpitts oscillators using a parasitic cancellation technique
dc.contributor.authorChen, Y.
dc.contributor.authorMouthaan, K.
dc.contributor.authorLin, F.
dc.date.accessioned2014-10-07T04:25:47Z
dc.date.available2014-10-07T04:25:47Z
dc.date.issued2010
dc.identifier.citationChen, Y., Mouthaan, K., Lin, F. (2010). Design of X-band and Ka-band Colpitts oscillators using a parasitic cancellation technique. IEEE Transactions on Circuits and Systems I: Regular Papers 57 (8) : 1817-1828. ScholarBank@NUS Repository. https://doi.org/10.1109/TCSI.2009.2037399
dc.identifier.issn15498328
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82134
dc.description.abstractAn X-band and two Ka-band monolithic microwave integrated circuit (MMIC) common drain Colpitts oscillators using a parasitic cancellation technique are designed and fabricated in a 0.2-μm GaAs pHEMT technology with a f T of 60 GHz. The parasitic cancellation technique significantly improves the negative resistance and increases the maximum operating frequency, which is suitable for microwave and millimeter-wave applications. An in-depth theoretical analysis of the Miller effect and insights in the behavior of the input impedance with the parasitic cancellation are provided. The effect of the Q-factor of the inductor used in the cancellation, and the impact of the parasitic cancellation technique on phase noise and frequency tuning range are analyzed and discussed in detail. The X-band design has a measured phase noise of -117.5 dBc/Hz at 1 MHz offset with an output power of -9.3 dBm. The first Ka-band design has a measured phase noise of -94 dBc/Hz at 1 MHz offset with an output power of +0.2 dBm. The second Ka-band design providing more flexibility has a measured phase noise of -98.5 dBc/Hz at 1 MHz offset with an output power of +0.3 dBm. The two Ka-band designs achieve very high fOSC/f T ratios and also demonstrate performance comparable to the best previously published oscillators in a similar frequency range. © 2006 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TCSI.2009.2037399
dc.sourceScopus
dc.subjectColpitts oscillator
dc.subjectKa-band
dc.subjectMiller effect
dc.subjectmonolithic microwave integrated circuit (MMIC)
dc.subjectnegative resistance
dc.subjectneutralization
dc.subjectparasitic capacitance
dc.subjectX-band
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TCSI.2009.2037399
dc.description.sourcetitleIEEE Transactions on Circuits and Systems I: Regular Papers
dc.description.volume57
dc.description.issue8
dc.description.page1817-1828
dc.identifier.isiut000282987200001
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