Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2020613
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dc.titleCubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant
dc.contributor.authorHe, W.
dc.contributor.authorZhang, L.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorCho, B.-J.
dc.date.accessioned2014-10-07T04:25:31Z
dc.date.available2014-10-07T04:25:31Z
dc.date.issued2009
dc.identifier.citationHe, W., Zhang, L., Chan, D.S.H., Cho, B.-J. (2009). Cubic-structured HfO2 with optimized doping of lanthanum for higher dielectric constant. IEEE Electron Device Letters 30 (6) : 623-625. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2020613
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82111
dc.description.abstractIt is demonstrated that HfO2 films can have much higher dielectric-constant values than the usual reported value of 20-24 by optimized incorporation of lanthanum element and crystallization to cubic structure. When HfO2 with 8% La is crystallized into cubic structure, the film exhibits the κ value of ∼38 which is the highest among ever reported HfO2-based high-κ dielectrics. The increased value of HfO2 with 8% La enables the leakage current to be reduced more than one order of magnitude lower, compared to amorphous-phase HfO2 under the same electric field. The dependence of film thickness and annealing temperature on the cubic crystallization is also reported. © 2009 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2009.2020613
dc.sourceScopus
dc.subjectCrystallization
dc.subjectCubic structure
dc.subjectHafnium oxide
dc.subjectHigh-κ dielectric
dc.subjectLanthanum oxide
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2009.2020613
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume30
dc.description.issue6
dc.description.page623-625
dc.description.codenEDLED
dc.identifier.isiut000266409200014
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