Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1354161
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dc.titleCrystalline zirconia oxide on silicon as alternative gate dielectrics
dc.contributor.authorWang, S.J.
dc.contributor.authorOng, C.K.
dc.contributor.authorXu, S.Y.
dc.contributor.authorChen, P.
dc.contributor.authorTjiu, W.C.
dc.contributor.authorChai, J.W.
dc.contributor.authorHuan, A.C.H.
dc.contributor.authorYoo, W.J.
dc.contributor.authorLim, J.S.
dc.contributor.authorFeng, W.
dc.contributor.authorChoi, W.K.
dc.date.accessioned2014-10-07T04:25:30Z
dc.date.available2014-10-07T04:25:30Z
dc.date.issued2001-03-12
dc.identifier.citationWang, S.J., Ong, C.K., Xu, S.Y., Chen, P., Tjiu, W.C., Chai, J.W., Huan, A.C.H., Yoo, W.J., Lim, J.S., Feng, W., Choi, W.K. (2001-03-12). Crystalline zirconia oxide on silicon as alternative gate dielectrics. Applied Physics Letters 78 (11) : 1604-1606. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1354161
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82109
dc.description.abstractEpitaxial crystalline yittria-stabilized zirconia (YSZ) oxide films were grown on silicon wafers by the laser molecular beam epitaxy technique. The interface of crystalline YSZ film in contact with silicon was found to be atomically sharp and commensurately crystallized without an amorphous layer. An x-ray photoelectron spectroscopy depth profile and transmission electron microscopy investigation showed that no SiO2 formed at the interface. For a film with electrical equivalent oxide thickness (teox) 14.6 Å, the leakage current is about 1.1 × 10-3 A/cm2 at 1 V bias voltage. The hysteresis and interface state density in this film are measured to be less than 10 mV and 2.0 × 1011 eV-1 cm-2, respectively. © 2001 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.1354161
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentPHYSICS
dc.contributor.departmentINSTITUTE OF ENGINEERING SCIENCE
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1063/1.1354161
dc.description.sourcetitleApplied Physics Letters
dc.description.volume78
dc.description.issue11
dc.description.page1604-1606
dc.description.codenAPPLA
dc.identifier.isiut000167364700048
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