Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2010.2045682
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dc.titleContact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain
dc.contributor.authorSinha, M.
dc.contributor.authorLee, R.T.P.
dc.contributor.authorChor, E.F.
dc.contributor.authorYeo, Y.-C.
dc.date.accessioned2014-10-07T04:25:14Z
dc.date.available2014-10-07T04:25:14Z
dc.date.issued2010-06
dc.identifier.citationSinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2010-06). Contact resistance reduction technology using aluminum implant and segregation for strained p-FinFETs with silicongermanium source/drain. IEEE Transactions on Electron Devices 57 (6) : 1279-1286. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2010.2045682
dc.identifier.issn00189383
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82086
dc.description.abstractWe have demonstrated the introduction of an additional aluminum (Al) implant step in the fabrication of strained p-FinFETs with silicongermanium (SiGe) source/drain (S/D). Al is implanted into the p+-SiGe S/D region at energy of 10 keV and a dose of 2×1014 atoms/cm 2, followed by its segregation at the NiSiGe/p+-SiGe S/D interface during germanosilicidation. The presence of Al at this interface leads to lowering of the effective Schottky barrier height for hole conduction, which, in essence, lowers the S/D contact resistance RC. R C is a dominant component of the FinFET parasitic series resistance RSD, which is lowered by approximately 25% using this technology, correspondingly leading to a substantial increase in the saturation drive current. The novel Al-segregated NiSiGe/p+-SiGe S/D contact junction in p-FinFETs does not degrade short-channel effects or the NiSiGe film morphology. © 2010 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2010.2045682
dc.sourceScopus
dc.subjectAl implant
dc.subjectContact resistance
dc.subjectFinFET
dc.subjectNiSiGe
dc.subjectSeries resistance
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/TED.2010.2045682
dc.description.sourcetitleIEEE Transactions on Electron Devices
dc.description.volume57
dc.description.issue6
dc.description.page1279-1286
dc.description.codenIETDA
dc.identifier.isiut000277884100012
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