Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2013.2248367
DC Field | Value | |
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dc.title | Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering | |
dc.contributor.author | Zhou, Q. | |
dc.contributor.author | Koh, S.-M. | |
dc.contributor.author | Thanigaivelan, T. | |
dc.contributor.author | Henry, T. | |
dc.contributor.author | Yeo, Y.-C. | |
dc.date.accessioned | 2014-10-07T04:25:14Z | |
dc.date.available | 2014-10-07T04:25:14Z | |
dc.date.issued | 2013 | |
dc.identifier.citation | Zhou, Q., Koh, S.-M., Thanigaivelan, T., Henry, T., Yeo, Y.-C. (2013). Contact resistance reduction for strained N-MOSFETs with silicon-carbon source/drain utilizing aluminum ion implant and aluminum profile engineering. IEEE Transactions on Electron Devices 60 (4) : 1310-1317. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2248367 | |
dc.identifier.issn | 00189383 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82085 | |
dc.description.abstract | We demonstrate a novel technique to reduce the nickel silicide (NiSi) contact resistance Rcon in strained n-channel MOSFETs (n-FETs) with silicon carbon (Si:C) stressors, where a presilicide aluminum (Al) implant is performed and the Al profile is found to be affected by carbon (C). Al diffusion during silicidation is retarded by the presence of C and a high Al concentration is retained within the NiSi:C film, which is considered to be the main reason for electron barrier height ΦBn reduction in NiSi:C contacts. Ge preamorphization implant prior to Al implant further reduces the ΦBn to 0.44 eV. Integration of this technique in n-FETs with Si:C stressors achieves a 50% reduction in source/drain series resistance and 12% enhancement in saturation drive current. Negligible impact on the device short-channel effects is observed. When Al segregates at the NiSi/Si interface, the hole barrier height ΦBp is lowered, and such an Al profile can be used for the p-FETs. Al profile engineering shows a promise as a single-metal-silicide solution for selective Rcon optimization in CMOS. © 1963-2012 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/TED.2013.2248367 | |
dc.source | Scopus | |
dc.subject | Aluminum | |
dc.subject | contact resistance | |
dc.subject | ion implant | |
dc.subject | Schottky barrier | |
dc.subject | silicon carbon | |
dc.subject | single-metal-silicide | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/TED.2013.2248367 | |
dc.description.sourcetitle | IEEE Transactions on Electron Devices | |
dc.description.volume | 60 | |
dc.description.issue | 4 | |
dc.description.page | 1310-1317 | |
dc.description.coden | IETDA | |
dc.identifier.isiut | 000316821800004 | |
Appears in Collections: | Staff Publications |
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