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|Title:||Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating||Authors:||Son, J.
|Issue Date:||18-Nov-2013||Citation:||Son, J., Banerjee, K., Brahlek, M., Koirala, N., Lee, S.-K., Ahn, J.-H., Oh, S., Yang, H. (2013-11-18). Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating. Applied Physics Letters 103 (21) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4833315||Abstract:||A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material. © 2013 AIP Publishing LLC.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82078||ISSN:||00036951||DOI:||10.1063/1.4833315|
|Appears in Collections:||Staff Publications|
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