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Title: Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating
Authors: Son, J.
Banerjee, K.
Brahlek, M.
Koirala, N.
Lee, S.-K.
Ahn, J.-H.
Oh, S.
Yang, H. 
Issue Date: 18-Nov-2013
Citation: Son, J., Banerjee, K., Brahlek, M., Koirala, N., Lee, S.-K., Ahn, J.-H., Oh, S., Yang, H. (2013-11-18). Conductance modulation in topological insulator Bi2Se 3 thin films with ionic liquid gating. Applied Physics Letters 103 (21) : -. ScholarBank@NUS Repository.
Abstract: A Bi2Se3 topological insulator field effect transistor is investigated by using ionic liquid as an electric double layer gating material, leading to a conductance modulation of 365% at room temperature. We discuss the role of charged impurities on the transport properties. The conductance modulation with gate bias is due to a change in the carrier concentration, whereas the temperature dependent conductance change is originated from a change in mobility. Large conductance modulation at room temperature along with the transparent optical properties makes topological insulators as an interesting (opto)electronic material. © 2013 AIP Publishing LLC.
Source Title: Applied Physics Letters
ISSN: 00036951
DOI: 10.1063/1.4833315
Appears in Collections:Staff Publications

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