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Title: Comparative studies on Zn0.95Co0.05O thin films on C-and R-sapphire substrates
Authors: Peng, Y.-Z.
Thomas, L. 
Song, W.-D.
Chong, T.C. 
Keywords: Anisotropy
Co-doped ZnO thin films
Diluted magnetic semiconductor
Issue Date: 2009
Citation: Peng, Y.-Z., Thomas, L., Song, W.-D., Chong, T.C. (2009). Comparative studies on Zn0.95Co0.05O thin films on C-and R-sapphire substrates. Chinese Physics B 18 (12) : 5501-5506. ScholarBank@NUS Repository.
Abstract: Zn0.95Co0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (110) sapphire substrate. Based on the results of high-resolution transmission electron microscopy and X-ray diffraction, C-plane films show larger lattice mismatch. The films exhibit magnetic and semiconductor properties at room temperature. The coercivity of the film is about 8000 A/m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure. © 2009 Chin. Phys. Soc. and IOP Publishing Ltd.
Source Title: Chinese Physics B
ISSN: 16741056
DOI: 10.1088/1674-1056/18/12/062
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