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|Title:||Comparative studies on Zn0.95Co0.05O thin films on C-and R-sapphire substrates||Authors:||Peng, Y.-Z.
Co-doped ZnO thin films
Diluted magnetic semiconductor
|Issue Date:||2009||Citation:||Peng, Y.-Z., Thomas, L., Song, W.-D., Chong, T.C. (2009). Comparative studies on Zn0.95Co0.05O thin films on C-and R-sapphire substrates. Chinese Physics B 18 (12) : 5501-5506. ScholarBank@NUS Repository. https://doi.org/10.1088/1674-1056/18/12/062||Abstract:||Zn0.95Co0.05O precipitate-free single crystal thin films were synthesized by a dual beam pulsed laser deposition method. The films form a wurtzite structure whose hexagonal axis is perpendicular or parallel to the plane of the surface depending on the C-plane (0001) or R-plane (110) sapphire substrate. Based on the results of high-resolution transmission electron microscopy and X-ray diffraction, C-plane films show larger lattice mismatch. The films exhibit magnetic and semiconductor properties at room temperature. The coercivity of the film is about 8000 A/m at room temperature. They are soft magnetic materials with small remanent squareness S for both crystal orientations. There is no evidence to show that the anisotropy is fixed to the hexagonal axis (C-axis) for the wurtzite structure. © 2009 Chin. Phys. Soc. and IOP Publishing Ltd.||Source Title:||Chinese Physics B||URI:||http://scholarbank.nus.edu.sg/handle/10635/82072||ISSN:||16741056||DOI:||10.1088/1674-1056/18/12/062|
|Appears in Collections:||Staff Publications|
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