Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4729387
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dc.titleCoherently coupled ZnO and VO 2 interface studied by photoluminescence and electrical transport across a phase transition
dc.contributor.authorSrivastava, A.
dc.contributor.authorHerng, T.S.
dc.contributor.authorSaha, S.
dc.contributor.authorNina, B.
dc.contributor.authorAnnadi, A.
dc.contributor.authorNaomi, N.
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorDhar, S.
dc.contributor.authorAriando
dc.contributor.authorDing, J.
dc.contributor.authorVenkatesan, T.
dc.date.accessioned2014-10-07T04:24:57Z
dc.date.available2014-10-07T04:24:57Z
dc.date.issued2012-06-11
dc.identifier.citationSrivastava, A., Herng, T.S., Saha, S., Nina, B., Annadi, A., Naomi, N., Liu, Z.Q., Dhar, S., Ariando, Ding, J., Venkatesan, T. (2012-06-11). Coherently coupled ZnO and VO 2 interface studied by photoluminescence and electrical transport across a phase transition. Applied Physics Letters 100 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4729387
dc.identifier.issn00036951
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82064
dc.description.abstractWe have investigated the photoluminescence and electrical properties of a coherently coupled interface consisting of a ZnO layer grown on top of an oriented VO 2 layer on sapphire across the phase transition of VO 2. The band edge and defect luminescence of the ZnO overlayer exhibit hysteresis in opposite directions induced by the phase transition of VO 2. Concomitantly the phase transition of VO 2 was seen to induce defects in the ZnO layer. Such coherently coupled interfaces could be of use in characterizing the stability of a variety of interfaces in situ and also for novel device application. © 2012 American Institute of Physics.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1063/1.4729387
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentNUS NANOSCIENCE & NANOTECH INITIATIVE
dc.contributor.departmentMATERIALS SCIENCE AND ENGINEERING
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.doi10.1063/1.4729387
dc.description.sourcetitleApplied Physics Letters
dc.description.volume100
dc.description.issue24
dc.description.page-
dc.description.codenAPPLA
dc.identifier.isiut000305269200029
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