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|Title:||Coherent and stochastic charge tunneling in ferromagnetic single electron transistors||Authors:||Jalil, M.B.A.
|Issue Date:||15-Feb-2004||Citation:||Jalil, M.B.A., Wang, X. (2004-02-15). Coherent and stochastic charge tunneling in ferromagnetic single electron transistors. Journal of Applied Physics 95 (4) : 1878-1883. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1640455||Abstract:||A model to calculate the I-V characteristic and tunneling magnetoresistance of a ferromagnetic single electron transistor (FM-SET) is presented. This model incorporates both the sequential stochastic nature of separate tunneling event which transfer discrete charges across the FM-SET, and the coherent tunneling of an individual electron across a barrier. The tunneling resistance Rt of each junction is calculated based on a free electron transmission through a trapezoidal barrier, and a two-band model within the FM electrodes to account for the spin dependence of the transmission coefficients.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/82063||ISSN:||00218979||DOI:||10.1063/1.1640455|
|Appears in Collections:||Staff Publications|
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