Please use this identifier to cite or link to this item:
Title: Coherent and stochastic charge tunneling in ferromagnetic single electron transistors
Authors: Jalil, M.B.A. 
Wang, X.
Issue Date: 15-Feb-2004
Citation: Jalil, M.B.A., Wang, X. (2004-02-15). Coherent and stochastic charge tunneling in ferromagnetic single electron transistors. Journal of Applied Physics 95 (4) : 1878-1883. ScholarBank@NUS Repository.
Abstract: A model to calculate the I-V characteristic and tunneling magnetoresistance of a ferromagnetic single electron transistor (FM-SET) is presented. This model incorporates both the sequential stochastic nature of separate tunneling event which transfer discrete charges across the FM-SET, and the coherent tunneling of an individual electron across a barrier. The tunneling resistance Rt of each junction is calculated based on a free electron transmission through a trapezoidal barrier, and a two-band model within the FM electrodes to account for the spin dependence of the transmission coefficients.
Source Title: Journal of Applied Physics
ISSN: 00218979
DOI: 10.1063/1.1640455
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

checked on May 25, 2019

Google ScholarTM



Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.