Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.tsf.2004.05.017
DC Field | Value | |
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dc.title | Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs | |
dc.contributor.author | Mathew, S. | |
dc.contributor.author | Bera, L.K. | |
dc.contributor.author | Balasubramanian, N. | |
dc.contributor.author | Joo, M.S. | |
dc.contributor.author | Cho, B.J. | |
dc.date.accessioned | 2014-10-07T04:24:37Z | |
dc.date.available | 2014-10-07T04:24:37Z | |
dc.date.issued | 2004-09 | |
dc.identifier.citation | Mathew, S., Bera, L.K., Balasubramanian, N., Joo, M.S., Cho, B.J. (2004-09). Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs. Thin Solid Films 462-463 (SPEC. ISS.) : 11-14. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2004.05.017 | |
dc.identifier.issn | 00406090 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82034 | |
dc.description.abstract | NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate. © 2004 Published by Elsevier B.V. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2004.05.017 | |
dc.source | Scopus | |
dc.subject | Charge trapping | |
dc.subject | HfAlO | |
dc.subject | High-k dielectrics | |
dc.subject | Mobility | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1016/j.tsf.2004.05.017 | |
dc.description.sourcetitle | Thin Solid Films | |
dc.description.volume | 462-463 | |
dc.description.issue | SPEC. ISS. | |
dc.description.page | 11-14 | |
dc.description.coden | THSFA | |
dc.identifier.isiut | 000223812800004 | |
Appears in Collections: | Staff Publications |
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