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https://doi.org/10.1109/LED.2008.2000600
| Title: | Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory | Authors: | Pu, J. Kim, S.-J. Lee, S.-H. Kim, Y.-S. Kim, S.-T. Choi, K.-J. Cho, B.J. |
Keywords: | Flash memory Floating gate (FG) Retention Silicon carbide (SiC-3C) Silicon carbide (Sic-3C) |
Issue Date: | Jul-2008 | Citation: | Pu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J. (2008-07). Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory. IEEE Electron Device Letters 29 (7) : 688-690. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000600 | Abstract: | We propose a novel approach to engineering floating gates (FGs) of Flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/ erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled Flash memory cells. © 2008 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82027 | ISSN: | 07413106 | DOI: | 10.1109/LED.2008.2000600 |
| Appears in Collections: | Staff Publications |
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