Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2008.2000600
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dc.titleCarbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory
dc.contributor.authorPu, J.
dc.contributor.authorKim, S.-J.
dc.contributor.authorLee, S.-H.
dc.contributor.authorKim, Y.-S.
dc.contributor.authorKim, S.-T.
dc.contributor.authorChoi, K.-J.
dc.contributor.authorCho, B.J.
dc.date.accessioned2014-10-07T04:24:32Z
dc.date.available2014-10-07T04:24:32Z
dc.date.issued2008-07
dc.identifier.citationPu, J., Kim, S.-J., Lee, S.-H., Kim, Y.-S., Kim, S.-T., Choi, K.-J., Cho, B.J. (2008-07). Carbon-doped polysilicon floating gate for improved data retention and P/E window of flash memory. IEEE Electron Device Letters 29 (7) : 688-690. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000600
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82027
dc.description.abstractWe propose a novel approach to engineering floating gates (FGs) of Flash memory cells, namely, carbon incorporation into polysilicon FGs. This technique demonstrated an improvement in retention and a larger program/ erase Vt window, particularly for smaller capacitance coupling ratio cells, which is important for future scaled Flash memory cells. © 2008 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2008.2000600
dc.sourceScopus
dc.subjectFlash memory
dc.subjectFloating gate (FG)
dc.subjectRetention
dc.subjectSilicon carbide (SiC-3C)
dc.subjectSilicon carbide (Sic-3C)
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2008.2000600
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume29
dc.description.issue7
dc.description.page688-690
dc.description.codenEDLED
dc.identifier.isiut000257626000011
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