Calculation of the R 0A product in n +-n-p and p +-p-n GaInAsSb infrared detectors

Abstract

In this paper, the zero-bias resistance areas product R 0A is calculated in the n +-n-p and p +-p-n Ga 0.8In 0.2As 0.81Sb 0.19 infrared detectors, on the base of the material parameters in the three layers. The calculated results show that parameters in the heavily doped layer in the different structures have different influences on R 0A. Moreover, R 0A in the n +-n-p structure is higher than that in the p +-p-n structure because the higher carrier concentration in the n +-region for the n +-n-p structure improves R 0A whereas the one in the p +-region for the p +-p-n structure reduces R 0A. © 2003 Elsevier B.V. All rights reserved.