Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.tsf.2013.02.068
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dc.titleBand gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate
dc.contributor.authorLiu, Z.Q.
dc.contributor.authorChim, W.K.
dc.contributor.authorChiam, S.Y.
dc.contributor.authorPan, J.S.
dc.contributor.authorNg, C.M.
dc.date.accessioned2014-10-07T04:24:13Z
dc.date.available2014-10-07T04:24:13Z
dc.date.issued2013-05-01
dc.identifier.citationLiu, Z.Q., Chim, W.K., Chiam, S.Y., Pan, J.S., Ng, C.M. (2013-05-01). Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate. Thin Solid Films 534 : 177-182. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2013.02.068
dc.identifier.issn00406090
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82002
dc.description.abstractWe studied the effects of adding yttrium (Y) in bulk lanthanum aluminate (LaAlO3 or LAO) by investigating the quaternary compound oxide, lanthanum yttrium aluminum oxide La0.3Y0.7AlO3 (LYAO), on silicon (Si). It is found that the inclusion of Y to LAO increases the band gap by ∼0.9 eV without compromising the dielectric constant. The enhancement in the band gap results in larger band offsets in LYAO and we also observe a decrease in leakage current at low voltage accumulation bias for Al/LYAO/Si as compared to Al/LAO/Si. In addition, the interface trap density of the Al/LYAO/Si structure remains comparable to that of Al/LAO/Si. Our findings show that LYAO is an attractive high dielectric constant material for use in next-generation low standby power devices. © 2013 Elsevier B.V.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/j.tsf.2013.02.068
dc.sourceScopus
dc.subjectBand gap
dc.subjectBand offset
dc.subjectDielectric constant
dc.subjectLanthanum aluminate
dc.subjectLanthanum yttrium aluminate
dc.subjectLeakage current
dc.subjectYttrium
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/j.tsf.2013.02.068
dc.description.sourcetitleThin Solid Films
dc.description.volume534
dc.description.page177-182
dc.description.codenTHSFA
dc.identifier.isiut000317736700030
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