Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2014.2310851
DC Field | Value | |
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dc.title | Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures | |
dc.contributor.author | Huang, H. | |
dc.contributor.author | Liang, Y.C. | |
dc.contributor.author | Samudra, G.S. | |
dc.contributor.author | Ngo, C.L.L. | |
dc.date.accessioned | 2014-10-07T04:24:07Z | |
dc.date.available | 2014-10-07T04:24:07Z | |
dc.date.issued | 2014 | |
dc.identifier.citation | Huang, H., Liang, Y.C., Samudra, G.S., Ngo, C.L.L. (2014). Au-free normally-off AlGaN/GaN-on-Si MIS-HEMTs using combined partially recessed and fluorinated trap-charge gate structures. IEEE Electron Device Letters 35 (5) : 569-571. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2014.2310851 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/81993 | |
dc.description.abstract | In this letter, partially recessed gate structures in conjunction with negative trap charges by F- plasma treatments both at AlGaN barrier and on gate dielectric surface are employed to realize the normally-OFF operation for AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors in Au-free scheme. A partial gate recessed trench is designed to effectively reduce the 2-D electron gas (2DEG) density and achieve positive threshold voltage Vth without severe degradation in 2-DEG channel mobility. Furthermore, the fixed trap charges are innovatively placed at the gate AlGaN and Si3N4 layers by a two-stage F- plasma treatment to further increase the Vth , without mobility degradation. A high Vth of 1.9 V and a drain current ∼200~mA/mm are achieved in the fabricated device, which also has a lower leakage current and the higher breakdown voltage of 580 V. © 2014 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2014.2310851 | |
dc.source | Scopus | |
dc.subject | AlGaN/GaN HEMTs | |
dc.subject | Au-free | |
dc.subject | gate trench | |
dc.subject | normally-off | |
dc.subject | plasma treatment. | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.doi | 10.1109/LED.2014.2310851 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 35 | |
dc.description.issue | 5 | |
dc.description.page | 569-571 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000335147600023 | |
Appears in Collections: | Staff Publications |
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