Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.1938849
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dc.titleAnnealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy
dc.contributor.authorTripathy, S.
dc.contributor.authorChia, C.K.
dc.contributor.authorDong, J.R.
dc.contributor.authorChua, S.J.
dc.date.accessioned2014-10-07T04:23:56Z
dc.date.available2014-10-07T04:23:56Z
dc.date.issued2005
dc.identifier.citationTripathy, S., Chia, C.K., Dong, J.R., Chua, S.J. (2005). Annealing-induced group v intermixing in InAs/InP quantum dots probed by micro-Raman spectroscopy. Electrochemical and Solid-State Letters 8 (8) : G194-G197. ScholarBank@NUS Repository. https://doi.org/10.1149/1.1938849
dc.identifier.issn10990062
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81977
dc.description.abstractPost-growth intermixing by rapid thermal annealing in self-assembled InAs/InP quantum dot (QD) structures with and without SiO 2 capping has been investigated. Room-temperature photoluminescence spectra measured from the intermixed QD structures show substantial blue shift accompanied by an increase in the PL intensity. Such group V intermixing is further probed by micro-Raman scattering technique. Apart from InAs and InP related longitudinal optical and transverse optical phonon peaks, Raman spectra show the appearance of InAs- and InP-like phonon peaks from InAsP-like alloy formed at the QD interfaces. These alloy modes show substantial peak shift with respect to annealing temperature and clearly indicates As/P exchange at the QD interfaces. © 2005 The Electrochemical Society. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1149/1.1938849
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1149/1.1938849
dc.description.sourcetitleElectrochemical and Solid-State Letters
dc.description.volume8
dc.description.issue8
dc.description.pageG194-G197
dc.description.codenESLEF
dc.identifier.isiut000230931300023
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