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https://doi.org/10.1016/j.jcrysgro.2005.12.114
Title: | Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy | Authors: | Liu, H.F. Xiang, N. Chua, S.J. |
Keywords: | A1. High-resolution X-ray diffraction A1. Rapid thermal annealing A3. Molecular beam expitaxy B1. Dilute nitrites |
Issue Date: | 15-Apr-2006 | Citation: | Liu, H.F., Xiang, N., Chua, S.J. (2006-04-15). Annealing behavior of N-bonding configurations in GaN 0.023As0.977 ternary alloy grown on GaAs (0 0 1) substrate by molecular beam epitaxy. Journal of Crystal Growth 290 (1) : 24-28. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2005.12.114 | Abstract: | We have investigated by high-resolution X-ray diffraction, secondary-ion-mass-spectroscopy (SIMS) and Raman scattering the effects of rapid thermal annealing on the structural properties of GaNxAs 1-x ternary alloys coherently grown on GaAs (0 0 1) substrates by molecular beam epitaxy. X-ray diffraction indicates that the in-plane strain does not relax and the vertical lattice in the GaNAs film tends to shrink, while SIMS reveals the absence of any N concentration change upon annealing. Furthermore, post-growth annealing causes an increase of substitutional N as revealed by the increase of the ratio of Raman scattering intensity between the nitrogen-localized vibration mode and the GaAs-like LO. After performing strain analysis, we conclude with the changes of N configurations in the GaNxAs1-x from the N-N split interstitial to the N-As split interstitial and the NAs substitutional at elevated temperatures, the thermal behaviors of N-N, N-As and NAs are reported over 700-850 °C. © 2006 Elsevier B.V. All rights reserved. | Source Title: | Journal of Crystal Growth | URI: | http://scholarbank.nus.edu.sg/handle/10635/81974 | ISSN: | 00220248 | DOI: | 10.1016/j.jcrysgro.2005.12.114 |
Appears in Collections: | Staff Publications |
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