Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0026-2692(02)00102-7
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dc.titleAnalysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors
dc.contributor.authorYuan, T.
dc.contributor.authorJin, C.S.
dc.contributor.authorJin, Y.
dc.date.accessioned2014-10-07T04:23:47Z
dc.date.available2014-10-07T04:23:47Z
dc.date.issued2003-04
dc.identifier.citationYuan, T., Jin, C.S., Jin, Y. (2003-04). Analysis of the detectivity for triple-layer heterojunction GaSb/GaInAsSb infrared detectors. Microelectronics Journal 34 (4) : 305-312. ScholarBank@NUS Repository. https://doi.org/10.1016/S0026-2692(02)00102-7
dc.identifier.issn00262692
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/81965
dc.description.abstractIn this paper, the detectivity is calculated and analyzed with the front-or backside illuminated case for both N-GaSb/p2-Ga0.8In0.2As0.19Sb0.8 1/p1-Ga0.9In0.1As0.09Sb0. 91 and N1-GaSb/n2-Ga0.9In0.1As0.09 Sb0.91/p-Ga0.8In0.2As0.19Sb 0.81 infrared photovoltaic detectors, respectively. The analysis results show that the main absorption appears in the p-type Ga0.8In0.2As0.19Sb0.81 material with either front- or backside illuminated case for above two structures. In each structure, the carrier concentration obviously affects the detectivity. The carrier concentration in the wide-bandgap material for the isotype heterojunction should be reduced as low as possible to reduce the tunneling rate at the isotype heterointerface. Moreover, the change of the detectivity with the p-side surface recombination velocity for the N1-n2-p structure is more sensitive than that with the p1-side surface recombination velocity for the N-p2-p1 structure. In the N-p2-p1 structure with the incident light from the p1-side surface, two-color detection is achieved. © 2003 Elsevier Science Ltd. All rights reserved.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1016/S0026-2692(02)00102-7
dc.sourceScopus
dc.subjectDetectivity
dc.subjectGaInAsSb/GaSb
dc.subjectInfrared photodetectors
dc.subjectNoise mechanisms
dc.subjectTriple-layer structure
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1016/S0026-2692(02)00102-7
dc.description.sourcetitleMicroelectronics Journal
dc.description.volume34
dc.description.issue4
dc.description.page305-312
dc.description.codenMICEB
dc.identifier.isiut000181881200012
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